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Defects in Semiconductors, Volume 91 by Lucia Romano, Vittorio Privitera, Chennupati Jagadish

By Lucia Romano, Vittorio Privitera, Chennupati Jagadish

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to provide an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in keeping with electric or mechanical fields.

The quantity comprises chapters focusing particularly on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to aid aid scholars and scientists of their experimental and theoretical paths.

  • Expert contributors
  • Reviews of crucial fresh literature
  • Clear illustrations
  • A wide view, together with exam of defects in numerous semiconductors

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Phys. Lett. 74, 2331–2333. , 1988. Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films. J. Appl. Phys. 64, 4914–4919. , 1988. Diffusion of impurities from implanted silicon layers by rapid thermal annealing. Phys. Status Solidi A 110, K61–K65. , 2006a. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P. J. Appl. Phys. 100, 113714. , 2006b. A simulation model for the density of states and for incomplete ionization in crystalline silicon.

An analysis of short process times, during which the pairing reaction has a significant influence on the profile form, has been pioneered by Cowern et al. (1990b). Followpffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ing his analysis, the quantity λMX ¼ τMX Á DMX can be seen as the mean projected path length of the pairs between their formation and their dissolution. Typical profile shapes as they would be expected for the diffusion of pairs with a constant diffusion coefficient from a source that maintains a constant surface concentration are shown in Fig.

Based on the general agreement that antimony diffuses nearly entirely via a vacancy mechanism, retarded rather than enhanced diffusion is expected during postimplantation annealing. The diffusion via vacancies made antimony also an element of choice for diffusion investigations as it allows to characterize an oversaturation of vacancies during high-temperature processing. Diffusion of antimony at extrinsic concentrations indicated that it diffuses via positive, neutral, and negatively charged pairs with vacancies.

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