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Compact models for integrated circuit design : conventional by Samar K. Saha

By Samar K. Saha

Compact types for built-in Circuit layout: traditional Transistors and Beyond offers a contemporary treatise on compact types for circuit computer-aided layout (CAD). Written by means of an writer with greater than 25 years of adventure in semiconductor strategies, units, and circuit CAD, and greater than 10 years of educational adventure in instructing compact modeling classes, this first-of-its-kind ebook on compact SPICE types for very-large-scale-integrated (VLSI) chip layout bargains a balanced presentation of compact modeling an important for addressing present modeling demanding situations and knowing new versions for rising devices.

Starting from easy semiconductor physics and masking state of the art gadget regimes from traditional micron to nanometer, this text:

  • Presents average versions for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), in addition to statistical MOS models
  • Discusses the foremost factor of approach variability, which seriously affects gadget and circuit functionality in complex applied sciences and calls for statistical compact models
  • Promotes extra study of the evolution and improvement of compact types for VLSI circuit layout and analysis
  • Supplies basic and functional wisdom precious for effective built-in circuit (IC) layout utilizing nanoscale devices
  • Includes workout difficulties on the finish of every bankruptcy and broad references on the finish of the book

Compact versions for built-in Circuit layout: traditional Transistors and Beyond

is meant for senior undergraduate and graduate classes in electric and electronics engineering in addition to for researchers and practitioners operating within the zone of electron units. notwithstanding, even these surprising with semiconductor physics achieve an outstanding snatch of compact modeling ideas from this book.

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Extra info for Compact models for integrated circuit design : conventional transistors and beyond

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38. 7 Drift velocities of electrons and holes in silicon at room temperature as a function of applied electric field showing velocity saturation at high electric fields. velocity increases linearly with the electric field indicating constant mobility. When the field exceeds about 2 × 104 V cm–1, carriers begin to lose energy by scattering with optical phonons and their velocity saturates. As the field exceeds 100 KV cm–1, carriers gain more energy from the field than what they can lose by scattering.

In charge-based models, an implicit function is evaluated to find the charge density for each set of biasing voltages in SPICE iterations similar to fs calculation. Note that the current is an exponential function of fs whereas a linear or quadratic function of Qi. Therefore, the accuracy of calculation of the Qi is not as high as that of fs calculation. Some of the widely referred charge-based compact MOSFET models include ACM [102], EKV [16], and BSIM6 [4] as described below. In 1995, Cunha et al.

It was reported that in the source-side-only approach, simple, explicit, and self-consistent Vdsat © 2016 by Taylor & Francis Group, LLC 10 Compact Models for Integrated Circuit Design solutions are possible by equating the saturation drain current to the model drain current equation, at Vds = Vdsat. The velocity–field relation requires special treatment to be able to include the effect of longitudinal field-dependent mobility in the integration of the continuity equation.  [62]. The small geometry effect and different physical effects including QM and polysilicon depletion effects are implemented in the CAD-oriented analytical MOSFET model [61].

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