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Analog Circuit Design Techniques at 0.5 V by Shouri Chatterjee, K.P. Pun, Nebojša Stanic, Yannis

By Shouri Chatterjee, K.P. Pun, Nebojša Stanic, Yannis Tsividis, Peter Kinget

Analog layout at ultra-low provide voltages is a crucial problem for the semiconductor learn group and industry.

Analog Circuit layout innovations at 0.5V covers demanding situations for the layout of MOS analog and RF circuits at a 0.5V energy offer voltage. All layout thoughts provided are actual low voltage suggestions - all nodes within the circuits are in the strength offer rails. The circuit implementations of physique and gate enter absolutely differential amplifiers also are mentioned. those construction blocks allow us to construct continuous-time filters, track-and-hold circuits, and continuous-time sigma delta modulators.

Current books on low voltage analog layout normally conceal strategies for provide voltages all the way down to nearly 1V. This publication offers novel rules and effects for operation from a lot reduce provide voltages and the innovations provided are simple circuit thoughts which are largely acceptable past the scope of the offered examples.

Analog Circuit layout innovations at 0.5V is written for analog circuit designers and researchers in addition to graduate scholars learning semiconductors and built-in circuit design.

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This level shift is essential in maintaining the pMOS devices in moderate inversion, and in maintaining the correct common-mode level for the output of the first stage 32 2 Fully Differential Operational Transconductance Amplifiers (OTAs) of the OTA. A current source is designed using a single nMOS device. To increase the inversion level of this device, the bias voltage is applied both, through the gate and the body. A replica of this current source is used in the biasing circuit as shown in Fig.

A stand-alone gate-input OTA was included on the same chip as a test structure. In simulation, the design had a DC small-signal gain of 55 dB, a nominal unity gain bandwidth of 15 MHz and a phase margin of 60o . The measured open-loop frequency response of the OTA is shown in Fig. 24 for different VNR . The negative resistor bias circuit automatically sets VNR such that the OTA DC gain is 62 dB. These measurements were done for a load resistor of 50 kΩ. The DC gain is expected to be much higher for smaller loading.

The significant series resistance can be attributed to distributed effects – the source and the drain are connected outside the device, but internally there is a large channel resistance between them. A distributed model used to predict this resistance is shown in Fig. 4. Techniques to accurately predict this series resistance have been discussed in [71]. More details on the varactor modeling are given in Appendix A. 1 Closed-form model We define the gate-source transadmittance, Ygs , by Ig /Vs , where Vs is a voltage phasor applied to the source/drain terminal and Ig is a current phasor leaving the gate terminal, with VB and VG constant.

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